Analysis of post-transit photocurrent-time data by application of Tikhonov regularization

M. J. Gueorguieva, C. Main, S. Reynolds

    Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

    Abstract

    A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.
    Original languageEnglish
    Title of host publicationAmorphous and heterogeneous silicon-based films--2002
    Subtitle of host publicationsymposium held April 2-5, 2002, San Francisco, California, U.S.A.
    EditorsJ. David Cohen
    Place of PublicationWarrendale, Pennsylvania
    PublisherMaterials Research Society
    Pages339-344
    Number of pages6
    ISBN (Print)1558996516, 9781558996519
    Publication statusPublished - 2002

    Publication series

    NameMaterials Research Society symposium proceedings
    Volume715

    Fingerprint

    transit
    photocurrents
    Laplace transformation
    Fourier transformation
    decay
    amorphous silicon
    trapping
    diodes
    approximation
    spectroscopy

    Cite this

    Gueorguieva, M. J., Main, C., & Reynolds, S. (2002). Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. In J. D. Cohen (Ed.), Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A. (pp. 339-344). (Materials Research Society symposium proceedings; Vol. 715). Warrendale, Pennsylvania: Materials Research Society.
    Gueorguieva, M. J. ; Main, C. ; Reynolds, S. / Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A.. editor / J. David Cohen. Warrendale, Pennsylvania : Materials Research Society, 2002. pp. 339-344 (Materials Research Society symposium proceedings).
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    abstract = "A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.",
    author = "Gueorguieva, {M. J.} and C. Main and S. Reynolds",
    year = "2002",
    language = "English",
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    series = "Materials Research Society symposium proceedings",
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    Gueorguieva, MJ, Main, C & Reynolds, S 2002, Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. in JD Cohen (ed.), Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A.. Materials Research Society symposium proceedings, vol. 715, Materials Research Society, Warrendale, Pennsylvania, pp. 339-344.

    Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. / Gueorguieva, M. J.; Main, C.; Reynolds, S.

    Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A.. ed. / J. David Cohen. Warrendale, Pennsylvania : Materials Research Society, 2002. p. 339-344 (Materials Research Society symposium proceedings; Vol. 715).

    Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

    TY - CHAP

    T1 - Analysis of post-transit photocurrent-time data by application of Tikhonov regularization

    AU - Gueorguieva, M. J.

    AU - Main, C.

    AU - Reynolds, S.

    PY - 2002

    Y1 - 2002

    N2 - A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.

    AB - A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.

    M3 - Chapter (peer-reviewed)

    SN - 1558996516

    SN - 9781558996519

    T3 - Materials Research Society symposium proceedings

    SP - 339

    EP - 344

    BT - Amorphous and heterogeneous silicon-based films--2002

    A2 - Cohen, J. David

    PB - Materials Research Society

    CY - Warrendale, Pennsylvania

    ER -

    Gueorguieva MJ, Main C, Reynolds S. Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. In Cohen JD, editor, Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A.. Warrendale, Pennsylvania: Materials Research Society. 2002. p. 339-344. (Materials Research Society symposium proceedings).