Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, S. Reynolds, E. Rafailov

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals’ difference frequency ~1 THz.(C) 2012 American Institute of Physics.
    Original languageEnglish
    Article number081114
    Number of pages4
    JournalApplied Physics Letters
    Volume101
    Issue number8
    Early online date23 Jul 2012
    DOIs
    Publication statusPublished - 2012

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    continuous radiation
    electromagnetic radiation
    quantum dots
    optical communication
    trapping
    wavelengths

    Cite this

    Kruczek, T., Leyman, R., Carnegie, D., Bazieva, N., Erbert, G., Schulz, S., ... Rafailov, E. (2012). Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. Applied Physics Letters, 101(8), [081114]. https://doi.org/10.1063/1.4747724
    Kruczek, T. ; Leyman, R. ; Carnegie, D. ; Bazieva, N. ; Erbert, G. ; Schulz, S. ; Reardon, C. ; Reynolds, S. ; Rafailov, E. / Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. In: Applied Physics Letters. 2012 ; Vol. 101, No. 8.
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    abstract = "Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals’ difference frequency ~1 THz.(C) 2012 American Institute of Physics.",
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    Kruczek, T, Leyman, R, Carnegie, D, Bazieva, N, Erbert, G, Schulz, S, Reardon, C, Reynolds, S & Rafailov, E 2012, 'Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device', Applied Physics Letters, vol. 101, no. 8, 081114. https://doi.org/10.1063/1.4747724

    Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. / Kruczek, T.; Leyman, R.; Carnegie, D.; Bazieva, N.; Erbert, G.; Schulz, S.; Reardon, C.; Reynolds, S.; Rafailov, E.

    In: Applied Physics Letters, Vol. 101, No. 8, 081114, 2012.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

    AU - Kruczek, T.

    AU - Leyman, R.

    AU - Carnegie, D.

    AU - Bazieva, N.

    AU - Erbert, G.

    AU - Schulz, S.

    AU - Reardon, C.

    AU - Reynolds, S.

    AU - Rafailov, E.

    PY - 2012

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    AB - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals’ difference frequency ~1 THz.(C) 2012 American Institute of Physics.

    U2 - 10.1063/1.4747724

    DO - 10.1063/1.4747724

    M3 - Article

    VL - 101

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

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    M1 - 081114

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    Kruczek T, Leyman R, Carnegie D, Bazieva N, Erbert G, Schulz S et al. Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. Applied Physics Letters. 2012;101(8). 081114. https://doi.org/10.1063/1.4747724