Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m

A. A. Lagatsky, V. E. Kisel, A. E. Troshin, N. A. Tolstik, N. V. Kuleshov, N. I. Leonyuk, A. E. Zhukov, E. U. Rafailov, W. Sibbett

    Research output: Contribution to journalArticle

    27 Citations (Scopus)

    Abstract

    We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)(4) laser operating in the 1.5-1.6 mu m spectral region. Low-loss GaInNAs quantumwell semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps. (c) 2007 Optical Society of America.

    Original languageEnglish
    Pages (from-to)83-85
    Number of pages3
    JournalOptics Letters
    Volume33
    Issue number1
    DOIs
    Publication statusPublished - 1 Jan 2008

    Keywords

    • SEMICONDUCTOR SATURABLE ABSORBER
    • SOLID-STATE LASERS
    • GLASS-LASER
    • YB
    • CRYSTALS
    • MIRROR
    • GROWTH

    Cite this

    Lagatsky, A. A., Kisel, V. E., Troshin, A. E., Tolstik, N. A., Kuleshov, N. V., Leonyuk, N. I., ... Sibbett, W. (2008). Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m. Optics Letters, 33(1), 83-85. https://doi.org/10.1364/OL.33.000083
    Lagatsky, A. A. ; Kisel, V. E. ; Troshin, A. E. ; Tolstik, N. A. ; Kuleshov, N. V. ; Leonyuk, N. I. ; Zhukov, A. E. ; Rafailov, E. U. ; Sibbett, W. / Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m. In: Optics Letters. 2008 ; Vol. 33, No. 1. pp. 83-85.
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    title = "Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m",
    abstract = "We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)(4) laser operating in the 1.5-1.6 mu m spectral region. Low-loss GaInNAs quantumwell semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps. (c) 2007 Optical Society of America.",
    keywords = "SEMICONDUCTOR SATURABLE ABSORBER, SOLID-STATE LASERS, GLASS-LASER, YB, CRYSTALS, MIRROR, GROWTH",
    author = "Lagatsky, {A. A.} and Kisel, {V. E.} and Troshin, {A. E.} and Tolstik, {N. A.} and Kuleshov, {N. V.} and Leonyuk, {N. I.} and Zhukov, {A. E.} and Rafailov, {E. U.} and W. Sibbett",
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    language = "English",
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    Lagatsky, AA, Kisel, VE, Troshin, AE, Tolstik, NA, Kuleshov, NV, Leonyuk, NI, Zhukov, AE, Rafailov, EU & Sibbett, W 2008, 'Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m', Optics Letters, vol. 33, no. 1, pp. 83-85. https://doi.org/10.1364/OL.33.000083

    Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m. / Lagatsky, A. A.; Kisel, V. E.; Troshin, A. E.; Tolstik, N. A.; Kuleshov, N. V.; Leonyuk, N. I.; Zhukov, A. E.; Rafailov, E. U.; Sibbett, W.

    In: Optics Letters, Vol. 33, No. 1, 01.01.2008, p. 83-85.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m

    AU - Lagatsky, A. A.

    AU - Kisel, V. E.

    AU - Troshin, A. E.

    AU - Tolstik, N. A.

    AU - Kuleshov, N. V.

    AU - Leonyuk, N. I.

    AU - Zhukov, A. E.

    AU - Rafailov, E. U.

    AU - Sibbett, W.

    PY - 2008/1/1

    Y1 - 2008/1/1

    N2 - We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)(4) laser operating in the 1.5-1.6 mu m spectral region. Low-loss GaInNAs quantumwell semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps. (c) 2007 Optical Society of America.

    AB - We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)(4) laser operating in the 1.5-1.6 mu m spectral region. Low-loss GaInNAs quantumwell semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps. (c) 2007 Optical Society of America.

    KW - SEMICONDUCTOR SATURABLE ABSORBER

    KW - SOLID-STATE LASERS

    KW - GLASS-LASER

    KW - YB

    KW - CRYSTALS

    KW - MIRROR

    KW - GROWTH

    U2 - 10.1364/OL.33.000083

    DO - 10.1364/OL.33.000083

    M3 - Article

    VL - 33

    SP - 83

    EP - 85

    JO - Optics Letters

    JF - Optics Letters

    SN - 0146-9592

    IS - 1

    ER -

    Lagatsky AA, Kisel VE, Troshin AE, Tolstik NA, Kuleshov NV, Leonyuk NI et al. Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m. Optics Letters. 2008 Jan 1;33(1):83-85. https://doi.org/10.1364/OL.33.000083