The influence of defects on response speed of high gain two-beam photogating in a-Si : H PIN structures

J. H. Zollondz, S. Reynolds, C. Main, V. Smirnov, I. Zrinscak

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    The dynamic characteristics of two-beam photogating in reverse biased a-Si:H pin devices have been investigated. The photogated current switch-on rise time scales approximately inversely with probe beam flux, suggesting the supply and subsequent capture of holes generated in the i-layer by the probe beam is the rate-limiting step. This interpretation leads to an estimated i-layer trap density of View the MathML source. The switch-off decay is complex, but contains an exponential component with a time constant of 2 s independent of probe beam flux. A mechanism involving emission and subsequent extraction or recombination of holes trapped in a narrow energy range of states some 0.7 eV deep is proposed to account for this. These findings are compared with independent data from dark current, transient photocurrent and constant photocurrent measurements.
    Original languageEnglish
    Pages (from-to)594-598
    Number of pages5
    JournalJournal of Non-Crystalline Solids
    Volume299-302
    Issue numberPart 1
    DOIs
    Publication statusPublished - Apr 2002

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    high gain
    Photocurrents
    Defects
    defects
    Switches
    Fluxes
    photocurrents
    probes
    switches
    Dark currents
    dark current
    dynamic characteristics
    time constant
    traps
    decay
    energy

    Cite this

    Zollondz, J. H. ; Reynolds, S. ; Main, C. ; Smirnov, V. ; Zrinscak, I. / The influence of defects on response speed of high gain two-beam photogating in a-Si : H PIN structures. In: Journal of Non-Crystalline Solids. 2002 ; Vol. 299-302, No. Part 1. pp. 594-598.
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    abstract = "The dynamic characteristics of two-beam photogating in reverse biased a-Si:H pin devices have been investigated. The photogated current switch-on rise time scales approximately inversely with probe beam flux, suggesting the supply and subsequent capture of holes generated in the i-layer by the probe beam is the rate-limiting step. This interpretation leads to an estimated i-layer trap density of View the MathML source. The switch-off decay is complex, but contains an exponential component with a time constant of 2 s independent of probe beam flux. A mechanism involving emission and subsequent extraction or recombination of holes trapped in a narrow energy range of states some 0.7 eV deep is proposed to account for this. These findings are compared with independent data from dark current, transient photocurrent and constant photocurrent measurements.",
    author = "Zollondz, {J. H.} and S. Reynolds and C. Main and V. Smirnov and I. Zrinscak",
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    The influence of defects on response speed of high gain two-beam photogating in a-Si : H PIN structures. / Zollondz, J. H.; Reynolds, S.; Main, C.; Smirnov, V.; Zrinscak, I.

    In: Journal of Non-Crystalline Solids, Vol. 299-302, No. Part 1, 04.2002, p. 594-598.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - The influence of defects on response speed of high gain two-beam photogating in a-Si : H PIN structures

    AU - Zollondz, J. H.

    AU - Reynolds, S.

    AU - Main, C.

    AU - Smirnov, V.

    AU - Zrinscak, I.

    PY - 2002/4

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    N2 - The dynamic characteristics of two-beam photogating in reverse biased a-Si:H pin devices have been investigated. The photogated current switch-on rise time scales approximately inversely with probe beam flux, suggesting the supply and subsequent capture of holes generated in the i-layer by the probe beam is the rate-limiting step. This interpretation leads to an estimated i-layer trap density of View the MathML source. The switch-off decay is complex, but contains an exponential component with a time constant of 2 s independent of probe beam flux. A mechanism involving emission and subsequent extraction or recombination of holes trapped in a narrow energy range of states some 0.7 eV deep is proposed to account for this. These findings are compared with independent data from dark current, transient photocurrent and constant photocurrent measurements.

    AB - The dynamic characteristics of two-beam photogating in reverse biased a-Si:H pin devices have been investigated. The photogated current switch-on rise time scales approximately inversely with probe beam flux, suggesting the supply and subsequent capture of holes generated in the i-layer by the probe beam is the rate-limiting step. This interpretation leads to an estimated i-layer trap density of View the MathML source. The switch-off decay is complex, but contains an exponential component with a time constant of 2 s independent of probe beam flux. A mechanism involving emission and subsequent extraction or recombination of holes trapped in a narrow energy range of states some 0.7 eV deep is proposed to account for this. These findings are compared with independent data from dark current, transient photocurrent and constant photocurrent measurements.

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    JO - Journal of Non-Crystalline Solids

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