Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications

N. S. Daghestani, M. Alduraibi, T. Piwonski, T. Ochalski, G. Huyet, M. Missous, T. Ackemann, M. A. Cataluna

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Quantum-dot (QD) materials have shown great promise for THz photoconductive devices. The generation of THz radiation relies on the excitation of highly-mobile carriers with sub-picosecond lifetimes. The band structure of QD materials grown for such THz applications leads to a multitude of energy bands/levels [1], onto which carriers can be excited. Here we show for the first time that the lifetime of carriers excited into the GaAs barriers (?=800 nm) is up to two orders of magnitude shorter than when these are excited resonantly within the QDs (?=1245 nm). We also present annealed QD-structures which exhibit faster carrier lifetimes than as-grown ones for most pump conditions, a feature unreported so far. Furthermore, an increase of carrier lifetime with the incident pump power is also unveiled for both annealed and as-grown samples. This study has significant implications in the understanding and optimal use of QD materials for THz generation applications [2].
    Original languageEnglish
    Title of host publication2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference
    Place of PublicationPiscataway, NJ.
    PublisherIEEE
    ISBN (Print)9781479905935
    DOIs
    Publication statusPublished - 2013
    Event2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference - ICM Congress Centre, Munich, Germany
    Duration: 12 May 201316 May 2013

    Conference

    Conference2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference
    Abbreviated titleCLEO/Europe - IQEC 2013
    CountryGermany
    CityMunich
    Period12/05/1316/05/13

    Fingerprint

    surfactants
    quantum dots
    carrier lifetime
    pumps
    life (durability)
    energy bands
    radiation
    excitation

    Cite this

    Daghestani, N. S., Alduraibi, M., Piwonski, T., Ochalski, T., Huyet, G., Missous, M., ... Cataluna, M. A. (2013). Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications. In 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference Piscataway, NJ.: IEEE. https://doi.org/10.1109/CLEOE-IQEC.2013.6801116
    Daghestani, N. S. ; Alduraibi, M. ; Piwonski, T. ; Ochalski, T. ; Huyet, G. ; Missous, M. ; Ackemann, T. ; Cataluna, M. A. / Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications. 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference. Piscataway, NJ. : IEEE, 2013.
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    title = "Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications",
    abstract = "Quantum-dot (QD) materials have shown great promise for THz photoconductive devices. The generation of THz radiation relies on the excitation of highly-mobile carriers with sub-picosecond lifetimes. The band structure of QD materials grown for such THz applications leads to a multitude of energy bands/levels [1], onto which carriers can be excited. Here we show for the first time that the lifetime of carriers excited into the GaAs barriers (?=800 nm) is up to two orders of magnitude shorter than when these are excited resonantly within the QDs (?=1245 nm). We also present annealed QD-structures which exhibit faster carrier lifetimes than as-grown ones for most pump conditions, a feature unreported so far. Furthermore, an increase of carrier lifetime with the incident pump power is also unveiled for both annealed and as-grown samples. This study has significant implications in the understanding and optimal use of QD materials for THz generation applications [2].",
    author = "Daghestani, {N. S.} and M. Alduraibi and T. Piwonski and T. Ochalski and G. Huyet and M. Missous and T. Ackemann and Cataluna, {M. A.}",
    year = "2013",
    doi = "10.1109/CLEOE-IQEC.2013.6801116",
    language = "English",
    isbn = "9781479905935",
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    Daghestani, NS, Alduraibi, M, Piwonski, T, Ochalski, T, Huyet, G, Missous, M, Ackemann, T & Cataluna, MA 2013, Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications. in 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference. IEEE, Piscataway, NJ., 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference, Munich, Germany, 12/05/13. https://doi.org/10.1109/CLEOE-IQEC.2013.6801116

    Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications. / Daghestani, N. S.; Alduraibi, M.; Piwonski, T.; Ochalski, T.; Huyet, G.; Missous, M.; Ackemann, T.; Cataluna, M. A.

    2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference. Piscataway, NJ. : IEEE, 2013.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    TY - GEN

    T1 - Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications

    AU - Daghestani, N. S.

    AU - Alduraibi, M.

    AU - Piwonski, T.

    AU - Ochalski, T.

    AU - Huyet, G.

    AU - Missous, M.

    AU - Ackemann, T.

    AU - Cataluna, M. A.

    PY - 2013

    Y1 - 2013

    N2 - Quantum-dot (QD) materials have shown great promise for THz photoconductive devices. The generation of THz radiation relies on the excitation of highly-mobile carriers with sub-picosecond lifetimes. The band structure of QD materials grown for such THz applications leads to a multitude of energy bands/levels [1], onto which carriers can be excited. Here we show for the first time that the lifetime of carriers excited into the GaAs barriers (?=800 nm) is up to two orders of magnitude shorter than when these are excited resonantly within the QDs (?=1245 nm). We also present annealed QD-structures which exhibit faster carrier lifetimes than as-grown ones for most pump conditions, a feature unreported so far. Furthermore, an increase of carrier lifetime with the incident pump power is also unveiled for both annealed and as-grown samples. This study has significant implications in the understanding and optimal use of QD materials for THz generation applications [2].

    AB - Quantum-dot (QD) materials have shown great promise for THz photoconductive devices. The generation of THz radiation relies on the excitation of highly-mobile carriers with sub-picosecond lifetimes. The band structure of QD materials grown for such THz applications leads to a multitude of energy bands/levels [1], onto which carriers can be excited. Here we show for the first time that the lifetime of carriers excited into the GaAs barriers (?=800 nm) is up to two orders of magnitude shorter than when these are excited resonantly within the QDs (?=1245 nm). We also present annealed QD-structures which exhibit faster carrier lifetimes than as-grown ones for most pump conditions, a feature unreported so far. Furthermore, an increase of carrier lifetime with the incident pump power is also unveiled for both annealed and as-grown samples. This study has significant implications in the understanding and optimal use of QD materials for THz generation applications [2].

    U2 - 10.1109/CLEOE-IQEC.2013.6801116

    DO - 10.1109/CLEOE-IQEC.2013.6801116

    M3 - Conference contribution

    SN - 9781479905935

    BT - 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference

    PB - IEEE

    CY - Piscataway, NJ.

    ER -

    Daghestani NS, Alduraibi M, Piwonski T, Ochalski T, Huyet G, Missous M et al. Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications. In 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference. Piscataway, NJ.: IEEE. 2013 https://doi.org/10.1109/CLEOE-IQEC.2013.6801116